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  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • 2SA1226
  • NEC Electronics, Inc.
  • SILICON TRANSISTOR
  • 4页
  • 183K
  • 2
  • 2SA1225
  • Toshiba America, Inc.
  • TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
  • 4页
  • 183K
  • 3
  • 2SA1222M
  • NEC Corporation
  • PNP Silicon Epitaxial Transistor for Low-Frequency Power Amplifiers
  • 4页
  • 85K
  • 4
  • 2SA1222L
  • NEC Corporation
  • PNP Silicon Epitaxial Transistor for Low-Frequency Power Amplifiers
  • 4页
  • 85K
  • 5
  • 2SA1222K
  • NEC Corporation
  • PNP Silicon Epitaxial Transistor for Low-Frequency Power Amplifiers
  • 4页
  • 85K
  • 6
  • 2SA1222
  • NEC Electron Devices
  • PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
  • 4页
  • 85K
  • 7
  • 2SA1221M
  • NEC Corporation
  • PNP Silicon Epitaxial Transistor for Low-Frequency Power Amplifiers
  • 4页
  • 85K
  • 8
  • 2SA1221L
  • NEC Corporation
  • PNP Silicon Epitaxial Transistor for Low-Frequency Power Amplifiers
  • 4页
  • 85K
  • 9
  • 2SA1221K
  • NEC Corporation
  • PNP Silicon Epitaxial Transistor for Low-Frequency Power Amplifiers
  • 4页
  • 85K
  • 10
  • 2SA1221
  • NEC Electron Devices
  • PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
  • 4页
  • 85K
  • 11
  • 2SA1220
  • Micro Commercial Components
  • PNP Silicon Power Transistor
  • 1页
  • 79K
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