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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • 2SC5179-T2
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 12页
  • 47K
  • 2
  • 2SC5179-T1
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 12页
  • 47K
  • 3
  • 2SC5178R-T2
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 8页
  • 80K
  • 4
  • 2SC5178R-T1
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 8页
  • 80K
  • 5
  • 2SC5178-T2
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 12页
  • 50K
  • 6
  • 2SC5178-T1
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 12页
  • 50K
  • 7
  • 2SC5177-T2
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 12页
  • 46K
  • 8
  • 2SC5177-T1
  • NEC Electronics, Inc.
  • NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
  • 12页
  • 46K
  • 9
  • 2SC5176
  • Toshiba America, Inc.
  • TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
  • 5页
  • 235K
  • 10
  • 2SC5175
  • Toshiba America, Inc.
  • TRANSISTOR SILICON NPN EPITAXIAL TYPE
  • 3页
  • 183K
  • 11
  • 2SC5174
  • Toshiba America, Inc.
  • SILICON NPN EPITAXIAL TYPE TRANSISTOR
  • 3页
  • 172K
  • 12
  • 2SC5173
  • Toshiba America, Inc.
  • TRANSISTOR SILICON NPN TRIPLE DIFFUSE TYPE(PCT PROCESS)
  • 4页
  • 230K
  • 13
  • 2SC5172
  • Toshiba America, Inc.
  • TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)
  • 4页
  • 191K
  • 14
  • 2SC5171
  • Toshiba America, Inc.
  • TRANSISTOR SILICON NPN EPITAXIAL TYPE
  • 3页
  • 168K
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