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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • 2SK2989
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS VI)
  • 2页
  • 125K
  • 2
  • 2SK2987
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 303K
  • 3
  • 2SK2986(SM)
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 298K
  • 4
  • 2SK2986
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 298K
  • 5
  • 2SK2985
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 300K
  • 6
  • 2SK2984-ZJ
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 64K
  • 7
  • 2SK2984-S
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 64K
  • 8
  • 2SK2984
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 64K
  • 9
  • 2SK2983-ZJ
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 65K
  • 10
  • 2SK2983-S
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 65K
  • 11
  • 2SK2983
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 65K
  • 12
  • 2SK2982-Z
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 60K
  • 13
  • 2SK2982
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 60K
  • 14
  • 2SK2980
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 43K
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