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  • IC型号
  • 描述
  • 厂家
  • 页数
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  • 1
  • BCR10UM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
  • 5页
  • 55K
  • 2
  • BCR10PN
  • Infineon Technologies Corporation
  • NPN/PNP Silicon Digital Transistor Array
  • 5页
  • 51K
  • 3
  • BCR10PM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 130K
  • 4
  • BCR10CS
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 121K
  • 5
  • BCR10CM-12
  • Renesas Technology America, Inc.
  • Medium Power Use Non-Insulated Type, Planar Passivation Type Triac
  • 12页
  • 414K
  • 6
  • BCR10CM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 129K
  • 7
  • BCR108W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 8
  • BCR108T
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 41K
  • 9
  • BCR108S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 43K
  • 10
  • BCR108
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
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