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  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • K4E660812E-TI/P-60
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 193K
  • 2
  • K4E660812E-TI/P-50
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 193K
  • 3
  • K4E660812E-TI/P-45
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 193K
  • 4
  • K4E660812E-TC/L-60
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 190K
  • 5
  • K4E660812E-TC/L-50
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 190K
  • 6
  • K4E660812E-TC/L-45
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 190K
  • 7
  • K4E660812E-JI/P-60
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 193K
  • 8
  • K4E660812E-JI/P-50
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 193K
  • 9
  • K4E660812E-JI/P-45
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 193K
  • 10
  • K4E660812E-JC/L-60
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 190K
  • 11
  • K4E660812E-JC/L-50
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 190K
  • 12
  • K4E660812E-JC/L-45
  • Samsung Semiconductor, Inc.
  • 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  • 21页
  • 190K
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