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  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • K4H511638B-TLB3
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 209K
  • 2
  • K4H511638B-TLB0
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 209K
  • 3
  • K4H511638B-TLA2
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 209K
  • 4
  • K4H511638B-TCCC
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 18页
  • 167K
  • 5
  • K4H511638B-TCC4
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 18页
  • 167K
  • 6
  • K4H511638B-TCB3
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 209K
  • 7
  • K4H511638B-TCB0
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 209K
  • 8
  • K4H511638B-TCA2
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 209K
  • 9
  • K4H511638B-GLB3
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 231K
  • 10
  • K4H511638B-GLB0
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 231K
  • 11
  • K4H511638B-GLA2
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 231K
  • 12
  • K4H511638B-GCCC
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 19页
  • 199K
  • 13
  • K4H511638B-GCB3
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 231K
  • 14
  • K4H511638B-GCB0
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 231K
  • 15
  • K4H511638B-GCA2
  • Samsung Semiconductor, Inc.
  • DDR SDRAM 512 MBit B-die
  • 23页
  • 231K
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