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  • 1
  • M53233200CJ0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 448K
  • 2
  • M53233200CJ0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 448K
  • 3
  • M53233200CE0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 448K
  • 4
  • M53233200CE0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 448K
  • 5
  • M53233200BJ0-C60
  • Samsung Semiconductor, Inc.
  • 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 449K
  • 6
  • M53233200BJ0-C50
  • Samsung Semiconductor, Inc.
  • 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 449K
  • 7
  • M53233200BE0-C60
  • Samsung Semiconductor, Inc.
  • 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 449K
  • 8
  • M53233200BE0-C50
  • Samsung Semiconductor, Inc.
  • 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 449K
  • 9
  • M53231600CJ0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 10
  • M53231600CJ0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 11
  • M53231600CE0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 12
  • M53231600CE0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 13
  • M53231600BJ0-C60
  • Samsung Semiconductor, Inc.
  • 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 14
  • M53231600BJ0-C50
  • Samsung Semiconductor, Inc.
  • 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 15
  • M53231600BE0-C60
  • Samsung Semiconductor, Inc.
  • 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 16
  • M53231600BE0-C50
  • Samsung Semiconductor, Inc.
  • 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
  • 21页
  • 434K
  • 17
  • M53230810DW0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 198K
  • 18
  • M53230810DW0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 198K
  • 19
  • M53230810DB0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 198K
  • 20
  • M53230810DB0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 198K
  • 21
  • M53230810CW0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 22
  • M53230810CW0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 23
  • M53230810CB0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 24
  • M53230810CB0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 25
  • M53230804CY0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 430K
  • 26
  • M53230804CY0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 430K
  • 27
  • M53230804CT0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 430K
  • 28
  • M53230804CT0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 430K
  • 29
  • M53230804BY0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 431K
  • 30
  • M53230804BY0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 431K
  • 31
  • M53230804BT0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 431K
  • 32
  • M53230804BT0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 431K
  • 33
  • M53230800DW0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 198K
  • 34
  • M53230800DW0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 198K
  • 35
  • M53230800DB0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 198K
  • 36
  • M53230800DB0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 198K
  • 37
  • M53230800CW0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 38
  • M53230800CW0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 39
  • M53230800CB0-60
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 40
  • M53230800CB0-50
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V
  • 15页
  • 291K
  • 41
  • M53230410DW0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 193K
  • 42
  • M53230410DW0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 193K
  • 43
  • M53230410DB0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 193K
  • 44
  • M53230410DB0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 193K
  • 45
  • M53230410CW0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 283K
  • 46
  • M53230410CW0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 283K
  • 47
  • M53230410CB0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 283K
  • 48
  • M53230410CB0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 2K Refresh, 5V
  • 15页
  • 283K
  • 49
  • M53230404CY0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 424K
  • 50
  • M53230404CY0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
  • 21页
  • 424K
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