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  • 1
  • M53640812CW0-6
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 294K
  • 2
  • M53640812CW0-5
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 294K
  • 3
  • M53640812CB0-6
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 294K
  • 4
  • M53640812CB0-5
  • Samsung Semiconductor, Inc.
  • EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 294K
  • 5
  • M53640810CW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 296K
  • 6
  • M53640810CW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 296K
  • 7
  • M53640810CB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 296K
  • 8
  • M53640810CB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 296K
  • 9
  • M53640805BY0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 436K
  • 10
  • M53640805BY0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 436K
  • 11
  • M53640805BT0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 436K
  • 12
  • M53640805BT0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 436K
  • 13
  • M53640800CW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 296K
  • 14
  • M53640800CW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 296K
  • 15
  • M53640800CB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 296K
  • 16
  • M53640800CB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 296K
  • 17
  • M53640412CW0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
  • 15页
  • 284K
  • 18
  • M53640412CW0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
  • 15页
  • 284K
  • 19
  • M53640412CB0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
  • 15页
  • 284K
  • 20
  • M53640412CB0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
  • 15页
  • 284K
  • 21
  • M53640410CW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 22
  • M53640410CW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 23
  • M53640410CB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 24
  • M53640410CB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 25
  • M53640405CY0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 26
  • M53640405CY0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 27
  • M53640405CT0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 28
  • M53640405CT0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 29
  • M53640405BY0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 30
  • M53640405BY0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 31
  • M53640405BT0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 32
  • M53640405BT0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 21页
  • 418K
  • 33
  • M53640400CW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 34
  • M53640400CW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 35
  • M53640400CB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 36
  • M53640400CB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
  • 15页
  • 285K
  • 37
  • M53633201CJ0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 38
  • M53633201CJ0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 39
  • M53633201CE0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 40
  • M53633201CE0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 41
  • M53633201BJ0-C60
  • Samsung Semiconductor, Inc.
  • 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 42
  • M53633201BJ0-C50
  • Samsung Semiconductor, Inc.
  • 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 43
  • M53633201BE0-C60
  • Samsung Semiconductor, Inc.
  • 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 44
  • M53633201BE0-C50
  • Samsung Semiconductor, Inc.
  • 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
  • 21页
  • 464K
  • 45
  • M53631601CJ0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 21页
  • 443K
  • 46
  • M53631601CJ0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 21页
  • 443K
  • 47
  • M53631601CE0-C60
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 21页
  • 443K
  • 48
  • M53631601CE0-C50
  • Samsung Semiconductor, Inc.
  • EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 21页
  • 443K
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