您所在的位置： 首页 > PDF资料 搜索IC型号：M536
  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 53
  • M53620812DW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 54
  • M53620812DW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 55
  • M53620812DB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 56
  • M53620812DB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 57
  • M53620812CW0-60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 58
  • M53620812CW0-50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 59
  • M53620812CB0-60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 60
  • M53620812CB0-50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 61
  • M53620810CW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 62
  • M53620810CW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 63
  • M53620810CB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 64
  • M53620810CB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 65
  • M53620805BY0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 66
  • M53620805BY0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 67
  • M53620805BT0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 68
  • M53620805BT0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 69
  • M53620800CW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 70
  • M53620800CW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 71
  • M53620800CB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 72
  • M53620800CB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 73
  • M53620412DW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 74
  • M53620412DW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 75
  • M53620412DB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 76
  • M53620412DB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 77
  • M53620412CW0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 78
  • M53620412CW0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 79
  • M53620412CB0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 80
  • M53620412CB0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 81
  • M53620410CW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 82
  • M53620410CW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 83
  • M53620410CB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 84
  • M53620410CB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 85
  • M53620405CY0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 86
  • M53620405CY0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 87
  • M53620405CT0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 88
  • M53620405CT0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 89
  • M53620405BY0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 90
  • M53620405BY0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 91
  • M53620405BT0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 92
  • M53620405BT0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 93
  • M53620400CW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
  • 94
  • M53620400CW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
  • 95
  • M53620400CB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
  • 96
  • M53620400CB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
  • 97
  • M53613201CJ0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 20页
  • 417K
  • 98
  • M53613201CJ0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 20页
  • 417K
  • 99
  • M53613201CE0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 20页
  • 417K
  • 100
  • M53613201CE0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
  • 20页
  • 417K
共 3 页 | 第 2 页 |  首页 上一页 下一页 尾页 转到：