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  • IC型号
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  • 1
  • M53620812DW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 2
  • M53620812DW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 3
  • M53620812DB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 4
  • M53620812DB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 311K
  • 5
  • M53620812CW0-60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 6
  • M53620812CW0-50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 7
  • M53620812CB0-60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 8
  • M53620812CB0-50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 287K
  • 9
  • M53620810CW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 10
  • M53620810CW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 11
  • M53620810CB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 12
  • M53620810CB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 289K
  • 13
  • M53620805BY0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 14
  • M53620805BY0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 15
  • M53620805BT0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 16
  • M53620805BT0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 389K
  • 17
  • M53620800CW0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 18
  • M53620800CW0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 19
  • M53620800CB0-C60
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 20
  • M53620800CB0-C50
  • Samsung Semiconductor, Inc.
  • 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 289K
  • 21
  • M53620412DW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 22
  • M53620412DW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 23
  • M53620412DB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 24
  • M53620412DB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 350K
  • 25
  • M53620412CW0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 26
  • M53620412CW0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 27
  • M53620412CB0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 28
  • M53620412CB0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V
  • 15页
  • 278K
  • 29
  • M53620410CW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 30
  • M53620410CW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 31
  • M53620410CB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 32
  • M53620410CB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
  • 15页
  • 279K
  • 33
  • M53620405CY0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 34
  • M53620405CY0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 35
  • M53620405CT0-C60
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 36
  • M53620405CT0-C50
  • Samsung Semiconductor, Inc.
  • Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 37
  • M53620405BY0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 38
  • M53620405BY0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 39
  • M53620405BT0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 40
  • M53620405BT0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
  • 20页
  • 380K
  • 41
  • M53620400CW0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
  • 42
  • M53620400CW0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
  • 43
  • M53620400CB0-C60
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
  • 44
  • M53620400CB0-C50
  • Samsung Semiconductor, Inc.
  • 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
  • 15页
  • 279K
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