• 1
• M53640812CW0-6
• Samsung Semiconductor, Inc.
• EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
• 15页
• 294K

• 2
• M53640812CW0-5
• Samsung Semiconductor, Inc.
• EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
• 15页
• 294K

• 3
• M53640812CB0-6
• Samsung Semiconductor, Inc.
• EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
• 15页
• 294K

• 4
• M53640812CB0-5
• Samsung Semiconductor, Inc.
• EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V
• 15页
• 294K

• 5
• M53640810CW0-C60
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
• 15页
• 296K

• 6
• M53640810CW0-C50
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
• 15页
• 296K

• 7
• M53640810CB0-C60
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
• 15页
• 296K

• 8
• M53640810CB0-C50
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V
• 15页
• 296K

• 9
• M53640805BY0-C60
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 436K

• 10
• M53640805BY0-C50
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 436K

• 11
• M53640805BT0-C60
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 436K

• 12
• M53640805BT0-C50
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 436K

• 13
• M53640800CW0-C60
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
• 15页
• 296K

• 14
• M53640800CW0-C50
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
• 15页
• 296K

• 15
• M53640800CB0-C60
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
• 15页
• 296K

• 16
• M53640800CB0-C50
• Samsung Semiconductor, Inc.
• 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V
• 15页
• 296K

• 17
• M53640412CW0-C60
• Samsung Semiconductor, Inc.
• Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
• 15页
• 284K

• 18
• M53640412CW0-C50
• Samsung Semiconductor, Inc.
• Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
• 15页
• 284K

• 19
• M53640412CB0-C60
• Samsung Semiconductor, Inc.
• Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
• 15页
• 284K

• 20
• M53640412CB0-C50
• Samsung Semiconductor, Inc.
• Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V
• 15页
• 284K

• 21
• M53640410CW0-C60
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

• 22
• M53640410CW0-C50
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

• 23
• M53640410CB0-C60
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

• 24
• M53640410CB0-C50
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

• 25
• M53640405CY0-C60
• Samsung Semiconductor, Inc.
• EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 26
• M53640405CY0-C50
• Samsung Semiconductor, Inc.
• EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 27
• M53640405CT0-C60
• Samsung Semiconductor, Inc.
• EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 28
• M53640405CT0-C50
• Samsung Semiconductor, Inc.
• EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 29
• M53640405BY0-C60
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 30
• M53640405BY0-C50
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 31
• M53640405BT0-C60
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 32
• M53640405BT0-C50
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V
• 21页
• 418K

• 33
• M53640400CW0-C60
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

• 34
• M53640400CW0-C50
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

• 35
• M53640400CB0-C60
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

• 36
• M53640400CB0-C50
• Samsung Semiconductor, Inc.
• 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V
• 15页
• 285K

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