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  • 3
  • MR16R162GMN0-CK8
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 16 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 275K
  • 4
  • MR16R162GMN0-CK7
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 16 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 275K
  • 5
  • MR16R162GMN0-CG6
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 16 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 275K
  • 6
  • MR16R162GEG0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 7
  • MR16R162GEG0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 8
  • MR16R162GEG0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 9
  • MR16R162GDF0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 10
  • MR16R162GDF0-CN9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 11
  • MR16R162GDF0-CM9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 12
  • MR16R162GDF0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 13
  • MR16R162GDF0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 16 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 14
  • MR16R162GAF0-CM8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 15
  • MR16R162GAF0-CK8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 16
  • MR16R162GAF0-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 17
  • MR16R162CMN0-CK8
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 12 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 275K
  • 18
  • MR16R162CMN0-CK7
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 12 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 275K
  • 19
  • MR16R162CMN0-CG6
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 12 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 275K
  • 20
  • MR16R1628MN1-CK8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 21
  • MR16R1628MN1-CK8
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 8 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 22
  • MR16R1628MN1-CK7
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 23
  • MR16R1628MN1-CK7
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 8 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 24
  • MR16R1628MN1-CG6
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 8 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 25
  • MR16R1628MN1-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 26
  • MR16R1628EG0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 27
  • MR16R1628EG0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 28
  • MR16R1628EG0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 29
  • MR16R1628DF0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 30
  • MR16R1628DF0-CN9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 31
  • MR16R1628DF0-CM9
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 32
  • MR16R1628DF0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 33
  • MR16R1628DF0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 16) * 8 pcs RIMM Module Based on 256 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 34
  • MR16R1628AF1-CN9
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 35
  • MR16R1628AF0-CM9
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 36
  • MR16R1628AF0-CM8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 37
  • MR16R1628AF0-CK8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 38
  • MR16R1628AF0-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 39
  • MR16R1626MN1-CK8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 40
  • MR16R1626MN1-CK8
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 6 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 41
  • MR16R1626MN1-CK7
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 42
  • MR16R1626MN1-CK7
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 6 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 43
  • MR16R1626MN1-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 44
  • MR16R1626MN1-CG6
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 6 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 45
  • MR16R1624MN1-CK8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 46
  • MR16R1624MN1-CK8
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 4 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 47
  • MR16R1624MN1-CK7
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 48
  • MR16R1624MN1-CK7
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 4 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 49
  • MR16R1624MN1-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 50
  • MR16R1624MN1-CG6
  • Samsung Semiconductor, Inc.
  • (16Mx16) x 4 pcs RIMM Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
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