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  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • NE1280400
  • NEC Electronics, Inc.
  • HETERO JUNCTION FIELD EFFECT TRANSISTOR
  • 6页
  • 34K
  • 2
  • NE1280400
  • NEC Electronics, Inc.
  • K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIP
  • 6页
  • 34K
  • 3
  • NE1280400
  • NEC Compound Semiconductor Devices, Ltd.
  • KA-BAND MEDIUM POWER HETERO-JUNCTION FET
  • 5页
  • 33K
  • 4
  • NE1280200
  • NEC Electronics, Inc.
  • HETERO JUNCTION FIELD EFFECT TRANSISTOR
  • 6页
  • 34K
  • 5
  • NE1280200
  • NEC Compound Semiconductor Devices, Ltd.
  • KA-BAND MEDIUM POWER HETERO-JUNCTION FET
  • 5页
  • 33K
  • 6
  • NE1280200
  • NEC Electronics, Inc.
  • K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIP
  • 6页
  • 34K
  • 7
  • NE1280100
  • NEC Electronics, Inc.
  • K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIP
  • 6页
  • 34K
  • 8
  • NE1280100
  • NEC Electronics, Inc.
  • HETERO JUNCTION FIELD EFFECT TRANSISTOR
  • 6页
  • 34K
  • 9
  • NE1280100
  • NEC Compound Semiconductor Devices, Ltd.
  • KA-BAND MEDIUM POWER HETERO-JUNCTION FET
  • 5页
  • 33K
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