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  • IC型号
  • 描述
  • 厂家
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  • 1
  • uPA808TKB-T1
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini
  • 12页
  • 55K
  • 2
  • uPA808TKB
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini
  • 12页
  • 55K
  • 3
  • uPA808TC-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
  • 16页
  • 89K
  • 4
  • uPA808TC
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
  • 16页
  • 89K
  • 5
  • UPA808TC
  • NEC Electronics, Inc.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 3页
  • 32K
  • 6
  • uPA808T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI
  • 12页
  • 55K
  • 7
  • UPA808T-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 9页
  • 51K
  • 8
  • uPA808T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI
  • 12页
  • 55K
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